Research And Design Of High Efficient Doherty Power Amplifier Based On SIP RF Technology

To enter in twenty-first Century ushered in the rapid development of com munication industry, only a few years, we have experienced from 2G, 3G to 4G mobile communication over. Communication services from basic satisfy th ecall, SMS business to the development of the multimedia data service image, video, audio file. This has forced the communication technology toward the la rger data capacity, faster output rate of development.The birth of 4G mobile communication system symbolizes, we stepped in to a new era, the era of high speed data transmission, more and more people enjoy it whenever and wherever possible the high-speed network life. LTE-Ad v-anced as a representative of the era of the 4G technology more and more p eople were received. With respect to the communication system of 4G mobile communication system also more and more close and personal communication in the past, the LTE-A system has a very wide signal bandwidth and signal peak average power. It also requires a base station radio frequency unit especi ally RF power amplifier has higher bandwidth and higher efficiency. Doherty structure is a kind of do not need to use the excellent performance of the po wer amplifier transistor is only need to make a change in the structure can p rovide an excellent solution for all this. This is why Doherty structure known as an important reason for the future of one of the most promising. And thec ombination of digital pre distortion technology can improve the linearity of th e power amplifier is largely and improve the problem of poor.This paper designed a Doherty power amplifier with high efficiency can satisfy the miniaturization of LTE-Advanced system of indicators. In this pape-r firstly introduces the principle of Doherty structure, advantages and disadva ntages as well as improvement method; secondly introduces some technology atpresent in the field of communication and the power amplifier related; after the design simulation, produced to meet the requirements of high efficient Do hertypower amplifier with GaN transistor, and the final debugging, debuggingr esultscompletely meet the design requirements; finally on the SIP RF packaget echnology are introduced in detail, and gives the design of SIP form modular package.