| Topological insulators represent a novel class of semi-conductors with spin-polarized metallic surface states which exhibit inherent robustness and unique electronic properties with potential applications in low-energy dissipation electronics, thermoelectrics, catalysis,and near-infrared transparent electrodes.Recently, significant progress has been made in semiconductor-based spin electronics. Using ferromagnetic electrodes as spin injectors and/or spin detectors, all-electrical spin injection, spin transport, spin detection, and spin accumulation have been realized in bulk silicon. A wide variety of spin studies have also been performed in bulk germanium (Ge), gallium arsenide (GaAs), graphene, and carbon nanotubes. In comparison, only a few studies of the spintronic properties of one-dimensional inorganic semiconductor nanowires (NWs), e.g., Si, Ge, indium nitride (InN), gallium nitride (GaN), and silicide,have been reported to date. Owing to their reduced scale and one-dimensional confinement, nanowires are anticipated to possess novel and useful physical properties for future. In this essay we present three ways of Bi2Se3 nanowire fabrication such as ultraviolet lithography, maskless lithography and electronic beam lithography, with a Bi2Se3 nanowire channel. Furthermore, we have discussed some crucial factors and their influence on the device performance during fabrication process. As a conclusion, through the experiment analysis a battery of finally optimized processing parameters were established, including exposure dose, fabrication procedure, electrodes’ size,etc. Afterwards, a series of characterization and electronic measurements have been performed, leading to a set of morphology and electric transportation properties results. Therefore using nano-fabrication to make Bi2Se3 spin injection and detection device at room tempreture is feasible, concequently further research is now available, this also give rise to the application of spintronic devices in the future. |
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