| Semiconductor laser diode is a significant kind of light source device in the fieldof optoelectronic devices and is widely applied in industrial fields of optical storage,optical information processing, etc. for its small size, high efficiency, easy integration,long lifetime and other particular merits. As following the improvement and progressof space technology, semiconductor laser diodes have also been widely used inaerospace and similarly extreme environmental conditions. Therefore, the study onthe characteristics and the reliability of the semiconductor laser diode has become oneof the issues of great concern. It’s known that traditional identification method ofreliability and lifetime of the semiconductor laser diode is accelerated aging, whichtherefore is not conductive to promotion due to its severe drawbacks such as highenergy consuming, long cycle, and large number of required samples. Recent studiesshow that, as a random noise signal widely exists in nature,1/f noise exists in the low-frequency electrical noise in semiconductor laser diodes as well. Based on itsgeneration mechanism,1/f low-frequency electrical noise often contains a wealth ofinformation of the device, which is the reason why its characteristics and parameterscan characterize the quality and performance of the semiconductor laser diode deviceto a certain extent. This approach of reliability evaluation is indirect but effective,sensitive, and low-cost, has its obvious advantages over traditional method thatconducts accelerated aging test on a large scale of devices. In addition,1/f noise is themain component of the low-frequency electrical noise of the semiconductor laserdiodes due to its physical structure and operating principles. Hence research on thelow-frequency electrical properties of semiconductor laser diodes is particularlycritical in assessing the reliability of semiconductor laser diodes.This paper is a continue research of the young scientists fund program of thenational natural science foundation of China (Grant No.61204055) and the young scientific research fund of science and technology development program of JilinProvince (Grant No.20130522188JH) and mainly focuses on the autocorrelationproperties of1/f low-frequency electrical noise from the semiconductor laser diodes.Firstly, we achieve the reappearance of the1/f noise on the computer by puttingforward the inverse wavelet transform method to synthesize1/f low-frequencyelectrical noise, analyze the decorrelation property of the wavelet transform on1/fnoise and its impact on the process of1/f noise synthesis with the inverse wavelettransform method. Then we conduct detailed calculation and analysis of thedecorrelation and variance characteristics of wavelet transform over1/f noise throughthe establishment of the theoretical model of the relationship between autocorrelationof1/f noise and the vanishing moments of wavelet functions. In order to measure anddetect1/f low-frequency electrical noise in semiconductor laser diodes, we build a1/fnoise measuring system for semiconductor laser diodes. We establish the connectionbetween the autocorrelation of1/f noise wavelet coefficients and the vanishingmoments of wavelet functions and verify it. In regard to the anomalies of the relationcurve between the autocorrelation of1/f noise wavelet coefficients and the vanishingmoments of wavelet functions, we deeply discuss and analysis those phenomenon.Similar autocorrelation calculation experiments and verification are also conducted onthe1/f noise simulation signals. Finally, combining the autocorrelation data in theexperiments, this paper postulates a new idea that evaluating the reliability ofsemiconductor laser diodes through the relationship between the correlation and thebias currents by means of measuring the correlation of1/f noise in semiconductorlaser diodes under distinct bias currents. This theory and its verification will be ofgreat importance for the successive semiconductor laser diode reliability analysis. |
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