Broadband Emission And Amplification Of Novel Bismuth-Doped Optical Fiber

With the rapid growth of data traffic, people’s requirements on the transmission capacity of optical fiber communication networks are increasingly high. At present, the operating wavelength of erbium-doped fiber amplifier only covers C and L band (1535-1625nm), and most of low-loss band of optical fiber communication window still have not been fully utilized. The broadband optical fiber amplifier covering the whole optical fiber communication window would· be a key device of high-speed communication system in the future. Bismuth-doped optical fiber has the property of ultra-wideband near infrared radiation, so it can be used to manufacture broadband light source, broadband optical fiber amplifier and widely tunable lasers. In this paper, the broadband luminescence and amplification of bismuth-doped optical fiber are studied. The main work includes:(1) The theory of light amplification by stimulated emission has been studied, and rate equations and power transmission equations about bismuth have been derived. The amplification model based on single bismuth-related luminescent center has been established.(2) Amplified spontaneous emission (ASE) of three different bismuth-doped fibers of different components have been measured experimentally, and the effect of various components are analyzed. Using830nm and980nm pumping source to excite bismuth-doped optical fiber, and speculating the luminescent center through analyzing the forward and backward ASE. By double-pumped experiments, the dependence of two luminescent centers of bismuth-doped optical fiber is verified.(3) Based on the theory of optical amplification and Giles model, partial differential equations which are suitable solved numerically are established. Using the numerical simulation methods to study the basic parameters of bismuth-doped optical fiber amplifier:gain and noise figure. The influence of pumping structure on signal gain is studied. ASE spectrum of bismuth-doped fiber at different concentrations of bismuth are simulated numerically.