The Mechanism Research And Preparation Of Electro-optic Modulator Based On Grapheme And Waveguide

System Architecture with multi-core, multi-chip package has become a majortrend in the future development of integrated circuit. However, continuous reductionof size will lead to a increase of both interconnection delay between chips and loss.Optical interconnecting system based on silicon substrate has high performance and iseasy for integration, of which Si-based electro-optic modulator is an importantcomponent. The modulators performance determines indexes including datathroughput rate, noise, power consumption, etc. This paper proposes a novel Si-basedelectro-optic modulator using graphene and waveguide. With excellent wide-bandmodulation and electrical conductivity of grapheme as well as high Q value opticalpath amplification of micro-ring resonator, the modulator can reach higher modulationdepth. At the same time, it is able to obtain a bandwidth of3dB. In addition, themodulator based on bus waveguide and graphene was designed at the same time toverify the light absorption properties of graphene. By the calculation, the absorptioncoefficient of graphene is0.01dB/um. And take advantage of this, according to theproperties of high Q ring resonator, the modulation depth of graphene between thetheory calculation and actual measurement got good consistency. Aiming at this newelectro-optic modulator, we study its modulation principle different from traditionalmodulators, build quantitative model of optical field distribution-material structureform modulation depth, analyze materials of biggest modulation frequency parametersand structural limiting factors, and achieve integrated fabrication of graphene andmicro-ring resonator. Therefore, the work can provide theory, model and method basisfor the novel electro-optic modulator, which plays an important role in integratedfabrication technology development of electro-optic modulation-wavelength divisionmultiplexer in the future chip optical interconnecting system.