Study And Preparation Of Novel Field Effect Transistors

With the remarkable progress in the development of integrated circuit and semiconductormaterials, has aroused extensive attention of various optoeletronic devices. As an representativeof optoeletronic devices, Field Effect Transistors shows it’s great application potential inelectronic products, new energy and auto industry, therefor many companies and researchinstitutions put a large mount of resource to study it. But, until now, Field Effect Transistors stillhave problems, such as hard conditions and high cost. Meanwhile Organic Field EffectTransistors still have low performance and unstable inair. These problems need to be solved.Firstly, an introduction of the development of OFET, research status and problemsencountered is presented in this artical. Afterwards, we introduce the operating principle of a fieldeffect transistor and the device need in the experiment. We start from choose the inorganic andorganic semiconductor layer in Field Effect Transistors. We chose a MoO3nanosheet to be usedas the function layer of the Field Effect Transistors. and then we fabricated a transparent organicfield effect transistor with F16CuPc. The specific work and results are as follows:(1)We use a special method by light-radiation to complete the facile preparation of rapid andlarge scale MoO3in1-2min at535℃.It’s growth temperature and time are lower than normal.This MoO3nanosheet have a smooth surface, it’s growth direction is (001), it have a2.8evband gap and it’s resistivity is9.2*10-4S/cm. Afterwards we study the progress of it. Thisprovide a high efficient and low cost way to preparate MoO3nanosheet in industry. Then weprepare to use this MoO3nanosheet in the functional layer of Field Effect Transistors.(2)We fabricated a transparent organic field effect transistor with WO3/Ag/WO3to be used as source and drain electrodes and F16CuPc to be used as function layer. The F16CuPc functionlayer was deposited by thermal evaporation at room temperature. Meanwhile the WAWelectrodes were deposited by electron beam evaporation at room temperature. Then we annealedthe device with different temperature, we tested the device and find that the best performancedevice was annealed with100℃，The optimized WAW electrode shows high transmittance(86.57%)and low sheet resistance (11Ω/sq). Consequently, we obtained high performancedevices with mobility of4.65×10-3cm2/Vs, an on/off ratio of about1.1×104, and an averagevisible range transmittance of75.6%.