Low-voltage Antimony Doped SnO₂Nanowire Transparent Field Effect Transistors

In recent years, the lightly antimony（Sb）-doped SnO₂nanowire field effecttransistor has attracted extensive research interest due to its high field effectmobility、low temperature process and low cost. However, in most of the papersreported, the operation voltage of antimony（Sb）-doped SnO₂nanowire field effecttransistor was too high（>10V），which causes more energy consumption of device. Sohow to reduce the operation voltage, improve the field effect mobility of the device,and enhance the gate electrostatic modulation ability have become the focus of thethis paper. The research of this paper mainly has two aspects:（1） the study of itspreparation and property of antimony doped SnO₂nanowire transparent transistorsgated by microporous SiO₂-based proton conductors.（2） the study of its preparationand property of antimony doped SnO₂nanowire transparent transistors gated bychitosan-based proton conductors.This paper is divided into four parts: the first part summarizes the propertiesand preparation method of Nano-materials，the properties and application of tinoxide. The second part introduces the basic theoretical knowledge of transistors,including its development history, operating principle, performance parameters, andalso introduces the selection of transistor preparation material, as well as thepreparation process of our laboratory.antimony doped SnO₂nanowire transparent transistors gated by microporousSiO₂with bottom gate top contact are prepared in our laboratory, the gate dielectrichas a relatively large specific capacitance value of2.14μF/cm2.The transparent FETshows excellent electric characteristics with a field-effect mobility of54.43cm2/Vs,current on/off ration of2104, and subthreshold gate voltage swingS=dVg/d（logIDS）=140mV/decade，the threshold voltage Vthof0.1V，and operationvoltage of0.5V.At the same time, microporous SiO₂is immersed in phosphoric acidwith a concentration of10%, and test the effect of gate dielectric with treatment ofphosphoric acid on the performance of device. The transparent FET gated bymicroporous SiO₂treated with phosphoric acid shows excellent electriccharacteristics with a field-effect mobility of149cm2/Vs, current on/off ration of1.3104, subthreshold gate voltage swing S=dVg/d（logIDS）=120mV/decade，threshold voltage Vthof-0.05V，and operation voltage of0.4V. 2%（atomic ratio）antimony doped SnO₂nanowire transparent transistors gatedby chitosan with bottom gate top contact are prepared in our laboratory, the gatedielectric has a relatively large specific capacitance value of4.2μF/cm2.The deviceshows excellent electrical properties with a saturation field-effect mobility of224cm2/Vs,current on/off ration of1.04105, subthreshold gate voltage swingS=dVg/d（logIDS）=150mV/decade，and threshold voltage Vthof-0.3V.1%antimonydoped SnO₂nanowire FETs and0.5%antimony doped SnO₂nanowire FETs werealso prepared in our lab, the effect of SnO₂nanowires with different Sb dopingLevels on device performance was discussed.The transparent1%antimony dopedSnO₂nanowire FETs gated by microporous SiO₂show excellent electriccharacteristics with a field-effect mobility of241cm2/Vs, current on/off ration of0.9105, subthreshold gate voltage swing S=dVGS/d（logIDS）=75mV/decade， andthreshold voltage Vthof0.1V. The transparent0.5%antimony doped SnO₂nanowireFETs gated by microporous SiO₂show excellent electric characteristics with afield-effect mobility of302cm2/Vs, current on/off ration of0.94105, subthresholdgate voltage swing S=dVg/d（logIDS）=50mV/decade，and threshold voltage Vthof0.4V.In conclusion, such a low-voltage transparent transistor gated by microporousSiO₂or chitosan is very promising for battery-powered portable nanoscale sensor.