Defect And Iron Activation In P-rich InP Single Crystal

Indium phosphide (InP) material is an excellent performance of a semiconductormaterial. InP has been widely applied in many fields. This paper studies the Characteristicsof the InP material by phosphorus injection synthesis and liquid encapsulated Czochralski(LEC) growth in P-rich melt. In this work, we have obtained the following results:1.1. In-depth understanding of the chemical etching theory of InP crystal, manyetching experiments were carried out, the optimized chemical etching process parameterswere obtained for both AB etching and CH(CrO3/HBr) etching. Both of them can Showed aproper and clear outline of etching morphology.2. The (100) Fe-doped InP and (111) S-doped InP were etched by the optimizedetching process parameters, achieved good etch effect.“Line” etch pits,“Ring” etch pitswere showed in (100) Fe-doped InP wafer, and “Dislocation arrays”,”Low angle grainboundaries”,”grow striations” were showed in (111) S-doped InP wafer. And the formationmechanism of various types defect was analyzed.3. The structural of the wafer samples were characterized by high-resolution X-raydiffraction, transmitted differential spectroscopy. The experiment result indicate that thethermal stress at the crystal growth progress is the main factor inducing the inhomogeneousdistribution of the lattice constant.4. The luminescence properties of the wafer samples were characterized byphotoluminescence mapping method. The experiment result indicates that crystal strainresult in the Photoluminescence peak wavelength shift. PL emission peak of the S-dopedsamples showed significant blue shift due to heavy doping effects.5. S-doped InP wafer showed correspondence between PL emission intensity andinfrared absorption rate, The lower the PL emitted, the higher the infrared absorpted.6. The experimental results indicate that there are irregular pores existed in the P-richLEC grown InP ingots. And this induced the inhomogeneity of the crystal quality andCrystalline quality. The solid-liquid interface convex to melt is conducive to the eliminationof holes.7. According to InP phase diagram, P-rich conditions of LEC Fe-doped InP crystal canimprove the Fe activation rate, Fe concentration around the holes which caused by P-richcondition is higher than the region away from the hole. The presence of holes lead to a higher defect concentration near them, the Fe concentration increased due to the impurityattractive effect of the defect.