Research And Design Of GaN HEMT High-Power High-Efficiency Switching-Mode Power Amplifier

At present, with the development of science and technology, mobile phone,wireless local area network, bluetooth, radio frequency identification etc., have beenan indispensable part in people’s daily life. Mobile phones and base stations’ pursuitof efficiency is becoming increasingly higher, and prolonging the battery life ofmobile devices and reducing cost are being a main research direction of wirelessindustry. RF modules of these wireless communication devices cost a lot of power.Realizing low power consumption and high efficiency mainly depends on poweramplifiers (PAs) of these devices. As a result, research of high-efficiency PAs has gotmore and more attention of the industry.At present, only Switching-Mode Power Amplifiers (SMPAs) can achievesatisfactory efficiency. SMPAs can be divided into Class D, Class E, Class F, Class Jand Continuous Class F. In SMPAs, active devices are drove as switches, and theworking state of transistors is either on or off. As a result, there is no overlap betweenthe drain voltage and drain current, and the power loss on transistors is zero. In theorythe drain efficiency of SMPAs can reach100%.A novel design method of current-mode Class D PA (CMCD PA) and a newtwo-stage high-efficiency Class B+F PA structure are proposed in this paper, on thebasis of in-depth analysis of the working principle and the basic characteristics of allkinds of SMPAs. According to this design method and this structure, two high-powerhigh-efficiency SMPAs working at2.65GHz using GaN HEMT were designed. Thetwo-stage high-efficiency Class B+F PA has been manufactured and tested, and thetest results agree with the simulation results. This paper also introduces the design,manufacture, testing and debugging process of these two PAs in detail. At2.65GHz，both PAs achieve satisfactory output power and efficiency. The CMCD PA has73%power added efficiency (PAE)，12.3dB power gain and10W output power insimulation，and the two-stage Class B+F PA has65.69%PAE,22.5dB power gainand10W output power in test.