Influence Of The Quantum Efficiency Of Different Cutting Methods Towards GaN-based LED

Since1991, Nichia company has successfully developed the GaN-based LED(lightEmitting Diode), GaN-based LED has been developing rapidly. LED has become the newlighting of21century, owing to its high efficiency in electricity-light transforming, long life, andless pollution. As the development of fabricating tech of III-V compound semiconductor devices.The research of LED tends to high effect and high luminance. With the increasingly wide rangeof applications, how to improve the luminous efficiency of GaN-based LED isbecome more and more popular. The main influence factors of the LED luminousefficiency is the internal quantum efficiency and external quantum efficiency, and theexternal quantum efficiency is one of the key technology of LED. Because of its lowefficiency, low input-output ratio, Traditional chip cutting method can not meet theneeds of modern production. It has been gradually falling behind. Laser scribing is anew cutting method. The laser scribing method is gradually replacing the traditionalcutting method, but laser scribing has a certain influence on the external quantumefficiency of GaN-based LED. How to reduce the laser influence on LEDlight effect, and promote external quantum of GaN-based LED has become one of thehottest research topics.This thesis mainly through the experiment and the analysis of the efficiency ofUV laser scribing method, laser scribing of SD mode on the LED chip externalquantum, and two kinds of different cutting method on the LED chip of the externalquantum efficiency were compared,found that the light loss caused by laser scratch isbigger, the efficiency of chip external quantum is larger, lower chip brightness.Through theoretical analysis and experimental study, UV laser scribing effecton brightness of LED chip is14.21%, SD divides the brightness of LED chip is about4.63%. By optimizing the SD dicing process, reduce the light loss caused by laserscratch, so that the chip brightness than UV scribing method upgrade10.84%,effectively improving the luminous efficiency of the device.