Study On The Technology Of Preparing ITO Target By Grouting

In order to systematically study the slurry preparation before grouting forming、 the preparation of ITO at the beginning of billet, the sintering atmosphere preparation the ITO target process. The mainly research line were study and design in this paper as follows:slurry preparation�'the forming of the grouting�' low temperature defatted�'the sintering of atmosphere process. The viscosity meter、solid density meter、SEM、XRD、differential thermal analyzer and other methods were used to analysis performance of the slurry、the density of pre-and-finished sinter dies,the resistivity of ITO target and microstructure,phase of fracture and so on. Thus the influence factor in each experimental stage were gotten quantitative. The main results are:(1)In the exploration and research of pulping three experiments experiment, the solid content、dosage of dispersants and mixing time to analysis of the three factors on the effect of viscosity and sedimentation height values of ITO coating. The results show that:Under the condition of the PH value 9 and binder dosage 1%, when solid content was 60%, the mixing time was 15 h, dispersant dosage was 0.3%, the liquidity and stability of ITO pulp is the best.(2) The forming process of grouting parameters of ITO the micro structure of the billet density and fracture were study, The results show that:a) Mold material selection and the design of die structure of ITO target material density has a certain influence, the mold design must assure the uniformity of mold suction.b) The pressure grouting molding process were adopts, With the increase of the forming pressure and grouting time in the process of forming, the ITO billet internal granular powder compaction at the very beginning. At the same time, the amount of water between particles have been suck. The gap between particles small errand increase density of the beginning of ITO billet; c) The appropriate extension of the grouting time can suppress and rearrangement of particles.It is can effectively improve the density of the billets at the beginning of ITO.(3) The study of early ITO billet of low temperature degreasing results showed that:There are mainly three parts in the process of low temperature degreasing:a) in the range of low temperature 20℃～250℃ degreasing process, The quality loss is about 0.58%. The reason is mainly water gasification, elimination and polyvinyl alcohol (PVA) and any other things to soften and dissolve.b) In the range of 250℃ ～500℃,PVA occurs intense decomposition reaction, This stage occurs decomposition reaction and exothermic reaction,thus the Mass loss is 1.14%. c) when the temperature is greater than 500℃,TG and DSC curve has no change, The degradation of poly (vinyl alcohol) reaction has been basically completed.(4) In order to optimize the influence between the oxygen atmosphere sintering process parameters and ITO target material density, resistivity and the fracture microstructure, Orthogonal experiment were designed to get the optimus value. The sintering temperature, heating rate, sintering time, oxygen atmosphere pressure can produce very big effect on the performance of ITO target materials, appropriate improvement in any of the four factors can improve the density of ITO target materials. After more than a certain range to improve the performance of the target material is not obvious.When Sintering temperature is 1550℃, the maximum density reached, After that, the density were decreased. Extend the time of heat holding is advantageous to the densification process, but greater than 8 h,There are no obvious change in density. Under the pure oxygen atmosphere of 0.02 MPa sintering, the decomposition of indium tin oxide can be effectively inhibited, Thus the preparation of a single-phase ITO target materials. The best technology of atmosphere sintering to get the ITO target materials is:Heating rate 500℃/h、Sintering temperature 1550℃、Sintering time 8 h、Oxygen atmosphere pressure 0.02MPa, The density of the ITO target is 93.99% and the resistivity is 4.04×10-4 Ω·m, and the preparation of ITO target materials is single-phase solid solution.