The Construction And Characterization Of Organic Memristive Devices Based On DNA And Ag NPs

The memristor, known as the fourth basic circuit element, is a nonlinear resistor with memory effect. With memristor integrated in the circuit, the performance of data processor can be greatly improved. The memory resistor becomes a hot topic, since HP laboratory successfully constructed the memristor prototype in 2008. Different types of materials and the different device structures have been begun to study. Organic memory devices have attracted more attention of the researchers due to its distinctive advantages such as simple technology, low-cost and high density data storage. Among them, the memory devices based on DNA is expected to be one of new organic memory devices. DNA, as one of the organic biomaterials, has attracted the interests of the scientific workers because of the advantages such as unique double helix, self-assembly and so on. In this paper, we mainly demonstrated the construction and characteristics of memristor devices based on DNA, and improve the memristor properties by using silver nanoparticles(Ag NPs).In this paper, two kinds of structural type of DNA memristors with doping and embedded Ag NPs were prepared by spin-coating method. We studied the working mechanisms and the memristor properties of the two memory devices, respectively. The main contents are listed as follows:1. With trisodium citrate as the reducing agent, different sizes of Ag NPs were prepared. And the morphology was characterized by AFM and TEM. 2. Two memory devices Al/Ag NPs-DNA-CTMAB/ITO and Al/DNA-CTMAB /Ag NPs/DNA-CTMAB/ITO with different structures were fabricated. 3. The influences of doping and embedding Ag NPs in memristor characteristics of devices, and the effects of particle size and scanning voltage amplitude in electrical performances of the two memristor devices with different structures were studied. 4. The effect of thermal annealing on propertie of the memristor device doped Ag NPs was investigated, and the conversion for memristor switching from unipolar to bipolar was realized.5. The effect of voltage polarity on electrical characteristic of the memristor device embedded Ag NPs layer was investigated. 6. Finally, the direct tunneling, carrier trapping and de-trapping, and redox reaction existing in the devices were proposed, according to the structural characteristics and experiment results of devices. The metal filament model was given, and the working mechanisms were explored.