| Compared with tin doped indium oxide（ITO）, aluminum doped zinc oxide（AZO） transparent conductive film material non-toxic, material is rich, low-cost advantages, has become the research focus TCO thin films.However, resistivity of low temperature preparation of AZO thin films have not reached the level of the ITO,thus reduce the resistivity of AZO thin films is an important research topic.Recently some scholars pointed out that doping H can change the photoelectric properties of AZO thin films, so this thesis mainly revolve around performance to improve mixing hydrogen AZO thin films.First, AZO thin film deposition parameters optimization.Of preparation of ZnO by our lab before to use ceramic target, so we first not mixed with hydrogen, by changing the sputtering power, mixed with oxygen, sputtering time, sputtering pressure and substrate temperature to find the optimal parameters.1) sputtering power effect on the properties of AZO thin films.With the increase of sputtering power（100-230W）, the resistivity of AZO thin films is reduced, the minimum of 5×10-3Ω. cm; Maximum transmittance in the visible area 91%;AZO thin films of preferred orientation of（002） plane to（103） surface;AZO thin film on the surface of grain, grain boundary.2) mixed with oxygen to the influence of AZO thin films.During a sputtering process into 0.2 sccm oxygen, the resistivity of AZO thin films by 7.6×10-3Ω. cm to 5×10-3Ω.cm; Thin film transmittance increased slightly.3) sputtering time effect on the properties of AZO thin films.Along with the increase in deposition time（10-20 min）, the resistance of the AZO thin films increase with the decrease of the first sputtering time 15 min, the resistivity of thin film min. 4.18×10-3Ω.cm; The film in the visible light transmission rate was 93%;Film thickness is thicker, the surface of thin film grain size bigger, better compactness.4) the influence of sputtering pressure of AZO thin films.With the increase of the pressure（0.4-0.6 Pa）, AZO thin films of resistance increase with the decrease of the first, when the sputtering pressure 0.5 Pa film resistivity of min. 5×10-3Ω.cm; The film transmission rate was 92%;Thin film on the surface of the grain is the most dense and less defects.5) the influence of substrate temperature on AZO thin films.With the increase of substrate temperature（100-200 ℃）, the resistivity of AZO thin films is reduced, the lowest for 2×10-3Ω.cm;The membrane surface morphology is also with the increase of substrate temperature and become more compact, more grains, the grain boundary.Second, on the above basis of the optimal parameters, AZO thin films doped with hyd rogen. The effect of hydrogen flow rate and substrate temperature on the properties of AZO thin films was investigated.1) The effect of hydrogen flow on the properties of AZO thin films. With the increase of hydrogen flow rate（0.4-1.2 sccm）, thin film resistance decrease at first and then in creased, when the hydrogen flow rate was 0.8 sccm, the resistivity reach the minimu m of 3.07×10-3Ω.cm; Film transmittance in the visible area was more than 93%.2) The effect of substrate temperature on the properties of hydrogen doped AZO thin films. With the increase of substrate temperature（100-200 ℃）, the resistance of AZO thin films doped hydrogen increased with the decrease of the first and then increased.When the substrate temperature was 175℃, the resistivity of it was 1 ×10-3Ω. cm, thin film transmission rate was 97%.3) The effect of substrate temperature and hydrogen flow on the properties of AZO th in films. Regardless of the substrate temperature, with the increase of the hydrogen fl ow rate, the resistivity of thin film with hydrogen decreased at first and then increased.When the hydrogen flow rate was 5.6 sccm, the resistivity of thin film was the lowest. When the hydrogen flow rate was larger, the resistivity of thin film was lower with the temperature of the substrate was higher. However, when the hydrogen flow r ate was smaller, the resistivity of the film with the substrate temperature which was 175℃ is less than the substrate temperature which was 225℃. When the substrate temperature was 225℃, the resistivity of it reach the minimum of 4.5×10-4Ω.cm,and the transmittance in the visible area was 93%. |
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