Study On Preparation Of Large Diameter Diamond Film

This paper adopts the intermittent P-CVD method and H2/CH4 atmosphere, with 20 mm diameter Si substrate on the above, 40 mm diameter Mo substrate in the bottom of the stacked way, also studied the influence of temperature on these syntheses of diamond film. By SEM and RAMAN analysis can obtain that Si substrate synthetic diamond film of optimum temperature for 850±20℃. Based on this, researched the effects for “ H:C” for synthetic diamond film on Si substrate diameter of 40 mm, through the partition characterization and analysis, synthetic diamond film of the optimum “ H:C” for “104:1”, and synthesized quality, crystalline and good uniformity of large size diamond film. For forecasting synthetic larger diamond film should be carried out in the existing process conditions on how to adjust, explored the substrate size of diamond film nucleation and growth. By The center of Si and Mo substrate temperature difference, SEM and RAMAN analysis, Mo substrate synthetic diamond film of optimum temperature for 870±20℃. After verified “ At the same time, the same conditions factors impact on two kinds of substrate synthetic diamond film” is feasible, avoided the repeated the experiment time and effort, saved the resources. cut “ H:C” further, successful synthesis of high quality large size diamond film.