Inyestigation To Ohmic Contact Of GaAs Semiconductor Lasers

The first semiconductor laser diode was invented in1962. After decades ofdevelopment, semiconductor laser diode technology has made remarkable progress.With small size, light weight, high efficiency, energy saving and other advantages,semiconductor laser diodes have been widely used in optical fiber communication,optical storage, full-color display, laser sensors, laser printing, and military applicationsuch as a laser rangefinder, guidance, wiretapping etc. Semiconductor laser diodetechnology involves many disciplines and develops rapidly. A large number of researchpapers have been reported. However, in the domestic, there is few research on thepreparation of ohmic contact on GaAs laser diode.This paper introduces the preparation and principle of the ohmic contact electrodeon GaAs laser diode. The variation and influencing factors of the contact betweenmetal and p and n face GaAs laser diode is found. Excellent ohmic contact electrode isderived on GaAs laser diode with good appearance, and the performance and reliabilityof the GaAs laser diode is improved.