| Since the emergence of integrated circuit, microelectronics industry has an significant influence on every aspect of society. However, along with the improvement of technology, the development of microelectronics industry is confronted with a huge challenge. Now, scientists improve the performance of the decice by reducing the size of critical dimension and increasing the level of integration. With the reducing of critical dimension, electrons as the information carrier meet its limitation. It is urgent to find a new way to replace the electron as the information carrier. The speed of light is the maximum speed at which everything in universe can travel, and photon as the information carrier has attracted attention from researchers. Optoelectronic integration will become the foundation of the next generation of information technology.Silicon which is an important semiconductor material has an stable chemical properties, and its electronic properties is excellent. Silicon is applied to all kinds of integrated circuit and semiconductor device, and it is an foundational material of microelectronic industry. However silicon has an indirect band gap, and there are many non-radiative recombination mechanism inside the silicon. All these aspects leads to the poor optical property of silicon, and restrict the application of Si in the field of optoelectronic integration. Some III-V group compound semiconductors, such as GaAs, GaN, InP, are direct band gap semiconductors, and its optical property is much better than silicon, but with the problem of high cost and mismatching with the technology of silicon, III-V group compound semiconductor can’t play an important role in the field of optoelectronic integration. Therefore, the research of Si-based light-emitting materials still have a great significance.Rare-earth elements have abundant of energy level structures, they are often doped into silicon to improve the optical property of silicon. Among the rare-earth elements, erbium has attract many researcher’s attention. While the energy trans from4I13/24I15/2, a light-emitting at1540nm from Er can be observed. The light-emitting at1540nm plays an important role in optical fiber communication, because of the low light-loss in fiber. The energy transfer happened in4f electronic shell, and with the shielding effect of5d shell, the light-emitting of4f can be free from the outside influence. However, problem still remains in Er-doped silicon, such as low solid solubility, temperature quenching and so on. In order to extend the light-emitting range, other rare-earth elements are also researched by scientists, for instance, light-emitting at355nm and450nm can be observed from Ce-doped silicon material.In this paper, the optical property of Ce-doped silicon has been studied. According to previous studies, the light-emitting from Ce3+in Si-based material is In the visible region of light. The relaxation time of the light-emitting of Ce3+is short, and this is suitable in high frequency field. In the future, Ce-doped Si-based light-emitting material will play an important role in optoelectronic integration and optoelectronic calculation. This paper includes four chapters:Chapter1:different kinds of light-emitting materials have been introduced. The way to enhance the property of Si-based light-emitting material have been expounded.Chapter2:SiO2thin film has been deposited on mono-crystalline silicon by electron beam evaporation. Then Ce3+were doped into the sample and different annealing treatment have been processed after the dopant. The infrared spectroscopy of the sample have been studied.Chapter3:Ce-doped SiO2thin films are prepared by two different ways, then the influence of doping concentration, annealing temperature and annealing atmosphere on the photoluminescence property of the sanple.Chapter4:summarized the study of this paper. |
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