| In recent years, in order to conform to the requirements of modern communication in smallcircuit size, the study of on-chip integrated antenna (Antenna On Chip, AOC) is becoming moreand more widely. Now the majority of semiconductor technology for the antenna-chip is based onCMOS process, the high dielectric constant of the silicon substrate and the greater thickness inCMOS technology make most of the electromagnetic energy that exists in silicon substrate intothe form of surface wave, and the low resistivity make most part of the energy in the form of heatdissipation, few went out of the substrate edge radiation, and thus causing the distortion ofantenna radiation pattern. The most important reason that leads to the low radiation efficiency forthe antenna on chip is the low resistivity in silicon substrate. Many researchers in the relevantfields has used many different methods in order to improve the problem of poor antenna radiationefficiency， the structure of the artificial magnetic conductor which is between the siliconsubstrate and the antenna is considered as a very effective method. This artificial magneticconductor structure plays a role in isolation for both of them, the incident electromagnetic waveinto its surface is reflected back in phase, which can effectively improve the antenna radiationefficiency forward.This paper used a new type of on-chip environment indium phosphide (InP) technology, InPmaterial has significant advantages, such as large band gap, high electron mobility, negativeresistance effect and so on, which make it an ideal substrate for microwave devices. Because theindium phosphide technology is a new technology, so in this article, we introduce this process forits structural parameters in detail, and integrate on-chip dipole antenna on this new technology, inorder to confirm the advantages of this process, we compared the on chip antenna performancewith the conventional CMOS processes in this paper. Because artificial magnetic conductorstructure has a great effect to improve the efficiency of the antenna radiation, artificial magneticconductor structure is taked in the paper as the main part. By discussing three classical artificialmagnetic conductor structure (mushroom type of high impedance surface, UC-PBG, frequencyselective surface) of the equivalent circuit model and the design formula to the analysis ofartificial magnetic conductor structure for the working principle. In the paper, we are designedthree kinds of artificial magnetic conductor structure that is suitable for indium phosphidetechnology (cross, hexagon, and square patch), and apply the artificial magnetic conductorstructure in cross shape to on-chip antenna, so we can compare whether loading of the artificialmagnetic conductor structure is different for the antenna performance under different conditions. |
