Investigation Of GaAs Transistor Die

With the changing international situation, various countries have putted their militaryweapons in the scope of their confidentiality. Transistor amplifier as the most common modules inmicrowave filed, which has been listed as key confidential target. Like T/R module in Phased arrayradar, the foreign country has embargoed to our country. In order to design innovation poweramplifier module, we need to study the transistor amplifier die.Die is the device after the package chip bared. There is significant advantage in realizing thetransistor entire performance, reducing size, and improving thermal performance for using thetransistor chips. However, due to the parameters discreteness of the chip, and the difference duringencapsulation process, the model of the chip provided by the manufacturer is difficult to effectivelyused for the design of high performance microwave components. So accurate extraction of the diemodel will be the focus and difficulty of microwave fields, and it is the task that the paper focuseson.We selected a GaAs die which is produced by Excelics Company to extract the model. Paperfirst introduces the history and significance of GaAs transistor, and then it elaborates the microwaveand amplifier theories. Then we introduced various models of the transistor amplifier, it is preparedfor the extract of the final model. At last in order to get the accurately die model, we designed aTRL calibration standard. Then we can keep the reference plane of the die to the both binding sideof the microstrip line. So we can keep the measurement error to the less. On this basis, adding theDC source to the die, we can get the model of die by VNA. And then we put the S parameter intothe ADS software to design an amplifier. From the result we can find the amplifier designed by diehas a perfect performance.