Study On Epitaxy Material Growth Of Mid-Infrared Laser

The2to5μm mid-infrared spectral region have high values and requirements, it can be useful in many kinds of applications which including infrared illμmination, medical diagnostics and treatment, chemical and even though in the area of biological spectral analyze.2-5μm infrared semiconductor laser diodes used on lidar and optoelectronic count ermeasure.In this thesis,works are focused on the calculation of material parameters,MBE growth of2.0μm and2.3μm antimonide quantμm wells.The main research and achievements are listed as the following:(1). Introduce2-5μm semiconductor laser applications for gas monitor,lidar and optoelectronic countermeasure.Informations introduced to focus on antimonide semiconductor laser.(2). Calculation basic parameters of material and design parameters of QWs.(3). Simulate calculation of2.0μm and2.3μm QWs and optimize parameters of QWs,the parameters are strain and wells width,discuss long wave QWs and theory of Waveguide.(4). Introduce MBE and test equipment of materials, optimize substrate temperature and research growth condition of QWs.(5). Design2.0μm antimonide of QWs laser,test the emitting spectral and I-V curve,the theory simulation of QWs are confirmed.