Etching Porcess Of Mid-Infrared Antimonide Laser

The paper briefly introduces the development of antimonide semiconductor laser, and then analyzes the problems in manufacturing process of the antimonide compounds laser.Firstly, lattice constants of quaternary compounds AlGaAsSb,InGaAsSb are calculated,and the relationship between the lattice constants and the component of Al and In has been discussed respectively.lt shows that the parameters such as the refractive index and the Bandgap of these two compounds,and after research the affect of the thickness of the waveguide layer on laser performance, we found out that the waveguide layer’s thickness of0.3um-0.5μm is the best choice. Based on above, we designed the structure of AlGaAsSb/InGaAsSb mulitiple quantum-well laser which working at wavelengths2μm.Secondly, this paper makes a brief introduction for both the dry etching process and wet etching process, the experiment use the hydrofluoric acid and phosphoric acid to make wet etching on Gasb respectively, and add tartaric acid into the two acid-based solution to compare the effects. The experimental analysis shows that both of the two etching solution have a good etching effect on Gasb material, and the rate of corrosion is stable. The corrosion rate can be regulated by adjusting the etching solution component, the morphology is good, and the material surface is smoothy. By adjusting the systematic components of etchant which add tartaric acid can make etched surface roughness lower and reduce the undercut effect phenomenon in the process of experiment.