Research Of High Power Pulsed Semiconductor Laser Components Technology

This paper mainly researches component technology of laser emission system. It is suitable for laser fuze and short distance measurement system, etc.First, it discusses how to use LD to realize the fuction of360°panorama in a missile. For the combination source which adopts the three tiled semiconductor LDs, it proposes an analog form which can be used to determin the structure of lens. In the sequence mode of ZEMAX, author use cylindrical mirror to collimate and expand respectively the fast and slow axis, after confirming the structure of the lens, author use3LD source to simulate in the mode of non-sequence. The fast axis divergence of1.34°after collimating, and slow axis of50.6°after expanding are realized.Secondly, concerning the laser drive source, it focuses on the problem of the ordinary way of excessively relying on the PWM control signal to get narrow pulse, and proposes a mode to get the narrow pulse which has a low demand to pulse width of control signal. It improves the energy storage charge by raising the voltage on both ends of the capacitor, reduce the capacitor in order to achieve high speed on discharging. After introducing the laser parasitic parameters, the author use Orcad/PSpice to simulate, and get the narrow pulse current’s pulse width of12ns, rising edge of4.9ns, and peak current of more than30A.Finally, it explores an onboard technology, which can reduce the lead inductance to the greatest extent. It also analyzes the material of; circuit board and system positioning structure, an puts forward an adjustable positioning structure. Under the condition of real-time detection, the optical system’s precise positioning and fixing relate to LD are achieved, and the specific structural design and related parameters are given.