| As the higher requirement rising toward radar and communication system’smulti-decoy, rapid response, ability of resistant to electrical interference, high reliabilityand mobility, the research of miniaturized and high performance power amplifierbecome a trend. The third generation semiconductor GaN has a lot of advantages. Suchas control of bandwidth, high mobility of electronics, high electronic saturated rate, highbreakdown of electric fields, high thermal conductivities, good chemical stability,ability of anti-radiation, and so on. Therefore the GaN power devices become the idealdevices of the solid-power amplifier now.The thesis aims to design a L band (900to1200MHz, output power>43dBm) GaNHEMT power amplifier, especially to research the method of miniaturized design. Themain work includes two points below:1. A GaN HEMT high efficency power amplifier is made by using NPTB00050power amplifier of NITRONEX Company and half lumped elements. The wholevolume of circuit is105mm×80mm×30mm. By simulating the circuit with ADSand between900-1200MHz, its gain is more than15.3dB; output power is morethan45.5dBm; PAE is more than54.7%with input of31dBm.The experimentalresult shows that the gain is more than5dB between900-1200MHz and10dBbetween980-1250MHz; the output power is more than43.1dBm and PAE is morethan50%between1025-1250MHz with input of36.5dBm. At1075MHz, theoutput power is more than47.8dBm and the PAE reaches77.8%.2. According to the requirment of miniaturization, research has been conducted tostudy the miniaturized design project of L band power amplifier. A miniaturized900-1200MHz GaN HMET power amplifier is made by ultilizing TGF2023-20power amplifier tube core produced by Triquint corporation and all lumpedelements. The whole volume of circuit is28mm×28mm×15mm. By simulatingthe circuit with ADS, when drain voltage is20V, its gain is more than18.1dB;output power is greater than43.5dBm; PAE is more than53.5%at the samefrequency range above with input of29dBm. The experimental result shows thatthe output power is more than43.2dBm with the RF signal of900MHz and drainvoltage20V when input is30.8dBm. |
