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Design And Characteristics Of1064nm Semiconductor Saturable Absorber Mirror

Posted on:2015-03-01Degree:MasterType:Thesis
Country:ChinaCandidate:F C LiuFull Text:PDF
GTID:2268330425493689Subject:Optics
Abstract/Summary:PDF Full Text Request
The invention of Semiconductor saturable absorber mirror (SESAM) makes the intra-cavity mode-locked solid-state laser system with independent design of cavity possible, which realizes mode-locking in solid-state lasers with different kinds of cavities. The main work of this thesis is to simulate and design1064nm SESAM and analyze its electric field distribution, reflection spectrum, dynamic characteristics and other basic properties. Based on the principles of optical thin film, semiconductor band theory and relative knowledge of quantum well structure, we designed the structure of1064nm SESAM with optical software. According to band gap theory, we calculated the thickness of saturable absorber. With Lorentz model, we simulated the dielectric function of thin InGaAs absorber. In order to determine the location of absorber layer, we simulated the electric field distribution of the designed saturable absorber mirror, so that the incident1064nm light can be efficiently absorbed in the saturable absorber mirror. We simulated the two-dimension and three-dimension image of electric field distribution and calculated its reflection spectrum. Based on the calculated basic properties, we simulated and analyzed the dynamic characteristics of the saturable absorber mirror in the end. This designing method is relatively simple, and the theoretical analysis is relatively precise, which can mostly characterize the designed semiconductor saturable absorber mirror and have practical value.
Keywords/Search Tags:Semiconductor saturable absorber mirror, Mode-locking, Bragg-mirror, Dielectric Function
PDF Full Text Request
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