Eptaxial Growth Of Antimony Compounds And It’s Physical Properties Research

The main contents of this article are homogeneous GaSb/hetero-epitaxial growth and characterization and analysis of physical properties of materials, the use of homoepitaxial guidance heteroepitaxial growth. As follows:using molecular beam epitaxy on GaAs/GaSb substrates grown on GaSb film homogeneity/heterogeneity epitaxy, the epitaxial growth process, we use RHEED monitoring of the growth process, record the various shocks diffraction diagram, determine the growth rate, Ⅲ/Ⅴ beam ratio, and the growth of the various parameters were optimized; then double-crystal X-ray diffraction, atomic force microscopy, scanning electron microscopy, PLmapping and other equipment on the quality of the epitaxial wafer optical, electrical, morphology aspects testing. The results show that the effect of the crystalline quality and surface morphology of GaSb hetero-epitaxial wafer is good, and electrical quality to achieve the desired goal.The conclusion is:the use of GaSb as the best growth rate of the buffer layer is414nm/h, AFM surface topography of the surface roughness obtained in about0.6nm from the PL peak photoluminescence intensity light emitting available at0.726eV, required energy is relatively small, GaSb film emission spectrum from this perspective, is ideal. Finally HALL doping test on the material and substrate temperature were optimized.