Surface Photovoltage Spectroscopy Technique Ultraviolet-emitting Material

Ultraviolet photocathode cathode is the core component of vacuum ultraviolet detector parts, it determines the overall performance of the device. Represented by the material such as GaN and AlGaN broadband gap photoemission group III nitride materials with excellent properties and inviting application tprospect. In this paper, we made a research on the ultraviolet electric launch material surface photovoltage spectrum system testing technology research.First,we explainded the generation principle of surface photovoltage, the measuring principle and application of surface photovoltage spectrum. On the basis of GaAs photoemission materials, we introduced GaAs surface photovoltage spectrum test system structure, put forward the measure against ultraviolet light electricity emission materials improvements, illustrated the detailed improvemen on lighe source, light voltage pool, optic fiber and test software respectively. Then based on the silicon surface photovoltage theory, using uv spectrum test system, we get the silicon surface photovoltage uv surface photovoltage spectrum and silicon material under different incident wavelength,different incident light intensity, and had carried on the qualitative analysis and the experimental data, proved that the uv surface photovoltage spectrum test system can effectively get surface photovoltage material in ultraviolet band. Light is studied in MIS capacitance voltage pool structure will affect the performance of the system, analysis of the measured surface photovoltage value and material for actual surface photovoltage of relationships, and through the experiment, studied in the sample under test and conductive glass between adding anhydrous ethanol’s impact on the material surface photovoltage measured values. Finally, we use uv surface photovoltage spectrum test system test GaN material on the surface of ultraviolet light pressure, the silicon surface photovoltage theoretical model is deduced on the basis of experiments the surface photovoltage of GaN materials used theoretical model, and a theoretical simulation was carried out.