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Research And Design Of A Large Dynamic Broadband Amplifier

Posted on:2014-12-07Degree:MasterType:Thesis
Country:ChinaCandidate:M TanFull Text:PDF
GTID:2268330425460999Subject:Electronics and Communications Engineering
Abstract/Summary:PDF Full Text Request
This paper introduces the R&D process of SG013large dynamic broadband amplifier.SG013is a monolithic semiconductor integrated circuit which used for submarine detection and aerospace industry. In our development process, we give full play to the existing foundation of semiconductor integrated circuit and go a step forward to improve the reliability of the final product. SG013balance features of large dynamic output and broadband amplification. The voltage gain of SGO13is continuously adjustable in a large scale. The chip can be used not only to large dynamic wide-band amplification but also to broadband range AD conversion. Now it has been used in military submarine detection apparatus and Shenzhou spacecraft electronic equipment, both have good effect.The designing process including main through route design, integrated semiconductor layout design, process design, process reliability measures adaption, practical application of research and development and reliability testing. In circuit design, we adopted a double end differential input, double end difference output, interstate emitter follower; in layout design, we applied the equilibrium temperature decimal of symmetric structure; in process design, we introduced a set of practices called seven-special parts and passivation technology which are used in military products quality control. We also used the white ceramic full leak tight encapsulation and a serious of strict screening technology so as to achieve the desired performance, high reliability and quality.A cadence simulation and verification is carried out. The result shows that the SG013have reached the desired requirements. The final product has great stability and reliability, it passed the1000hours high temperature long time storage and dynamic type life test with the temperature of125℃, output amplitude VPP≥10V,AC output asymmetry AV~≤10%. When the voltage gain KV=50dB, band width BW≥30MHz. These basic parameters fully indicate that the circuit design, layout, processes design of SG013have achieve the desired result.No.29Research Institute of the Ministry of Information Industry used SG013successfully to develop submarine detector and Shenzhou spacecraft instruments.
Keywords/Search Tags:Broadband Amplifiers, Voltage gain, High temperature storage, WhiteCeramic Encapsulation
PDF Full Text Request
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