Research And Design Of Various Reconfigurable Chemical Vapor Deposition Reactor

Chemical vapor deposition (CVD) is a primary method for some new semiconductorfilm materials preparation, such as SiC, GaN, ZnO and graphene. The CVD reactor is themost important factor for successfully achieving film growth process, for film quality controland for the size and thickness control.This paper firstly introduced the status of present applications and preparations of SiC,GaN, ZnO and graphene in domestic and abroad, and then described the material preparationprocesses and growth equipment. It also proposed a new various reconfigurable CVD reactorcombined with the CVD film-growing characteristics, which can prepare those four newsemiconductor materials.Secondly, with the basis theory of the CVD film-growing, this paper established amulti-physics coupling model which is used to study the physical and chemical factorsaffecting film-growing in the CVD reactor by integrating fluid, heat and mass transfernumerical analysis.Thirdly, based on the research on the film-growing process and equipment of those fournew semiconductor materials using the multi-physics coupling model, this paperfundamentally studied and summarized the relationship between processes and equipmentthrough three aspects, the growth mechanisms and conditions, reactant transport methods,chemical reaction processes and features.Finally, based on the relationship between processes and equipment, we built a newvarious reconfigurable CVD reactor for a variety of new semiconductor materials preparation.The new CVD reactor is also verified by simulation method which can achieve differenttemperature zones configuration mode, gas-liquid-solid sources configuration mode, differentshower-head configuration mode and different reactor space configuration mode. And withthe different modes it can meet the process conditions of SiC, GaN, ZnO and graphene. Inaddition, this paper studied the vent method, the shape of graphite plate, the thickness ofgraphite plate, the distance between heater and graphite plate, which can impact the reactorflow and temperature field uniformity and then optimized the CVD reactor.