Organic light emitting diodes (OLEDs) are moving fast into the fields of flat-panel displays and solid-state lighting. In order to secure the stable and rapid growth of the OLED industry, it is of great importance to develop new organic functional materials and well characterize their optoelectronic properties.This thesis mainly do the three aspects of the research work:Firstly, Inverted bottom-emission organic light emitting diodes (IBOLEDs) employing the electron injection structure of ITO/NTCDA/Li2CO3doped BCP (1:4Li2CO3:BCP) were fabricated.The NTCDA on ITO was characterized crystalline and n-doped. Compared to the IBOLED using the single dopted layer, the one using n-NTCDA has perfect performance. The dependence of the current conduction in IBOLED on the thickness of NTCDA was investigated. Secondly, The charge carrier mobility is widely considered as one of the most important parameters in designing high-performance OLEDs. We measured the electron mobility of tris(8-quinolinolato) aluminum in organic light emitting diodes driven under square waves. Thus, the electron mobility of Alq3can be evaluated, and the obtained results are in good accordance with the reported values. Last, The combination of MoO3doped4,4-N,N-bis [N-1-naphthyl-N-phenyl-amino]biphenyl (NPB:MoO3) and4,4’-N, N’-dicarbazole-biphenyl (CBP:MoO3) was used to enhance the hole conduction in organic light emitting diodes (OLEDs). Compared to the OLED using the single dopted layer, the double one has better performance, but subject to the thickness of2:1NPB:MoO3. Theat the NPB:MoO3/CBP:MoO3interface and its influences on the hole current of OLED was discussed. |