Preparation And Investigation On Phosphorus Doped ZnO Nano/Microstructures And Light Emitting Device

ZnO is a II-VI clan direct wide band gap semiconductor materials. At room temperature，its band gap width is3.37eV and exciton binding energy reaches up to60meV, has beenconsidered as a potential candidate material for short-wavelength optoelectronic applications.At present, the preparation of ZnO micro/nanostructure and optoelectronic devices hasbecome a hot spot of research at home and abroad. This article we have prepared the p-dopedZnO nanowires and ZnO microwires by CVD method. Meanwhile, the p-ZnO:Pnanowires/n-Si heterojunction and single Au/ZnO/Al microwire Schottky barrier diodes wasfabricated, and studied their characteristic. The main achievements are listed as follows:(1) The p-ZnO:P nanowires/n-Si heterojunction were synthesized by simple chemicalvapor deposition method without using catalyst. The surface morphology, structural andoptical properties of ZnO:P nanowires were researched the scanning electron microscope(SEM), X-ray diffraction (XRD) and photoluminescence (PL). Results were indicated thatphosphorus-doped ZnO nanowires with good crystalline quality were grown epitaxial as wellas a c-axis orientation. In addition, the A0X and FA acceptor emissions were observed fromphotoluminescence spectra of phosphorus-doped ZnO nanowires at10K. Furthermore, Thep-ZnO:P nanowires/n-Si heterojunction devices has good rectifier characteristics with positiveopen electric is4.2V, and reverse breakdown voltage is6.0V, which indicated that the ZnO:Pnanowires were p-type conductivity.(2) The over-long large-scale ZnO microwires were grown by chemical vapor depositionmethod without using catalyst. And the Au/ZnO/Al Schottky barrier diodes was fabrication onthe basis of it. The naked eye and optical microscope observed that the ZnO microwires wereintensive distribution and size large, the length of single microwire is about2.5cm and thediameter of it is about40μm. In addition, the device showed a good rectifying behavior, theforward turn on voltage is2.9V and the reverse breakdown voltage is3.6V. The preparationof the device, which has important significance to the development of optoelectronic devices.