A Design Of IGBT Which Can Enhance The Capbility Of Latch-up

Insulated Gate Bipolar Transistor(IGBT) is an important kind of power electronicdevices which have been applied to a lot of fields. The large demand for IGBT increasesrapidly each year in China. The domestic IGBT research is started lately. Although theIGBT technique in China has made great breakthroughs over the past few years, theIGBT product is short in species diversity and reliability. Therefore, it is significant toresearch IGBT deeply.At first, the IGBT’s three important properties (turn-off, turn-on, switching) arepresented in this dissertation. And then the theory of latch-up and some kinds of designwhich can enhance the capability of latch-up are introduced at length. In order toimprove the device’s capability of latch-up, the paper designs a novel kind of IGBT. Thenew kind of IGBT has a SiO2buried layer whose shape is “L”. And the SiO2buriedlayer is under the device’s P-base which can enhance the capability of latch-up byconfining the move of holes. For a600V new IGBT, through the analysis and simulationabout parameters of cell and SiO2buried layer, we find the new IGBT’s capability oflatch-up is much better than the traditional IGBT. The process sequence of the newIGBT is designed in this paper at last.Because of the limitation of domestic conditions, the follow-up work is to find moresuitable processing methods for the characteristics of the production line and tape-out.