GaN-based High-voltage LED Chip Structure Design And Preparation

Light-emitting diodes with the advantages of high light efficiency, low energyconsumption, long life, non-toxic green gradually become the mainstream lighting source inlighting market. They have been used to landscape lighting, road lighting, indoor lighting andother fields more and more frequently. In recent years, the rising of the high-voltage LED,means that the traditional low voltage LED chip has been insufficient to meet the needs of thepeople in the design of the driving circuit. With its small current driving, high-voltage andsimple driving circuit designing, HV-LED comes into the line of sight of lighting applicationsR&D personnel gradually. This subject used the current mainstream LED chip preparationprocesses and preparation technologies to do some basic researches in high-voltage LED chipstructure designing.Bridge structure was optimized for high-voltage LED chip structure to solve the problemof electrode connecting bridge laying prone bridge, drain while connected to the core particles.Using inductively coupled plasma (ICP) etching machine, adjusting the etching parameters,under in no BCl3conditions, while etching isolation trench of chip cells, the chip cells wereetched as positive ladder structure. Trapezoid base average angle was70.2degrees, so thatwhile the laying of the electrode connecting bridge, the electrodes may reach the bottom ofthe isolation trench along the edge of the trapezoidal structure of the chip cells, and then risesfrom the bottom of the isolation trench to another chip cells on the electrode, which enhancesthe electrode stability, effectively prevents leakages from happening, also optimizes the yieldrate.We studied on the side wavy microstructures on the preparation of high-voltage LEDchips. We fabricated the corresponding samples and conducted a random selection of films todo optical tests. The test result showed that, the LED color rendering indexes of the sampleswere high, with an average over82. Generally, higher CRI would reduce the light extractionefficiency and light output efficiency of LED chips. In improving the packaging process,using the appropriate package technologies for HVLED, the luminous efficiency could be improved to some extent.