The Preparation And Properties Of Optimal And Electrical Of AZO Transparent Conductive Thin Film

Aluminum-doped ZnO （AZO） films are widely used in thin-film solarphotovoltaic cells, organic lighting diodes, liquid-crystal displays because of itsexcellent properties of optical and electrical, inexpensive, nontoxic, and high stabilityin hydrogen plasma atmosphere. And it is considered to be one of the most promisingtransparent electrode materials. In this paper, firstly, the orthogonal design isemployed to ascertain the sequence of the influence of factors and optimize the basicpreparation processes of AZO films which is deposited by pulse laser deposition. Andthen, influences of deposit conditions of homo-buffer layer on the performance ofAZO films are investigated to further optimize the deposition parameters ofhomo-buffer layer. At last, uniform thin films of AZO have been deposited on5-inchglass substrate base on the optimum technologic parameters. The main researchcontents and results can be summarized as follows:（1） The optimum technologic parameters of the deposition of AZO films withhomo-buffer layer are obtained （substrate temperature300oC, oxygen pressure0mTorr,deposition time45min, laser energy350mJ） by using orthogonal design. And theinfluence sequence of growth parameters for AZO films is substrate temperature>oxygen pressure> deposition time> laser energy. The AZO film deposited under theoptimal parameters has high transmittance （88.3%） and low resistivity(2.63×10^-4·cm).（2） The qualities of AZO films can be improved dramatically by inserting ahomo-buffer layer between AZO film and glass substrate. And then, influences ofdifferent substrate temperature （30oC,100oC,500oC） and different oxygen pressure（0mTorr,40mTorr,200mTorr） of homo-buffer layer on structural, optical, andelectrical properties of AZO films are investigated. The experiment resultsdemonstrate that suitable deposition temperature and oxygen pressure of homo-bufferlayer are beneficial to obtain AZO films with good optical and electrical properties.AZO film with low resistivity (2.13×10^-4·cm) and high transmittance （above89.1%）has been obtained by synthetically optimizing growth parameters of AZO films andhomo-buffer layer.（3） The5inch AZO films are deposited by utilizing the laser beam scanning overthe large diameter target base on the optimum growth parameters. The distancebetween the substrate and target is adjusted to obtain the appropriate deposition radiusof the laser produced plume. The experiment results show that uniform AZO films have been deposited with the distance between substrate and target is117mm. And themaximum variation in film thickness is found to be less than±3.2%. The squareresistance of5inch AZO film are stable at110/□and125/□, and the transmittanceof the central point of film is86.6%.