Research Of Function Regulation On The C₆₀ Organic Field-Effect Transistor Based On Pentacene Thickness

Organic Field Effect Transistors(OFETs) have attracted considerable attention in the past twenty years. After several years of expansive development, great achievements have made in the field of the preparation of high-performance organic devices. Recently, OFETs based sensors, light-emitting transistors, photodetectors, and memory cells have been reported by many research groups. This clearly shows that the rapid development of multi-functional organic field-effect transistor. In general, the performance of OFETs is not governed solely by organic semiconductor materials or structural options, whereas it is largely influenced by interface modified layers. Therefore, using proper interface modified layer is an simple and effective way to improve the performance of OFETs. This paper mainly concerns the interface contact mechanism of OFETs. The different structures of devices have been designed.The main content as follows:(1) C60-based OFETs with PMMA dielectric modified by pentacene passivation layer were fabricated. The effect on thicknesses of pentacene passivation layer was studied. The performance of the devices with pentacene passivation layer is considerably improved compared to the OFET with only PMMA dielectric. The morphology and the crystallinity of C60film can be changed, and then charge carrier transport can be improved.(2) C6o-based OFETs with PMMA dielectric modified by LiF passivation layer were fabricated. The effect on LiF passivation layer was studied. The performance of the devices with LiF passivation layer is considerably improved compared to the OFET with only PMMA dielectric.(3) Pentacene/C60based ambipolar heterostructure OFETs (AOFETs) were fabricated. Small organic molecule pentacene acts as the first active layer, C60acts as the second active layer. Compared with the device without annealing treatment, the modified device has demonstrated good ambipolar characteristics. The performance of the devices with annealing treatment was considerably improved.(4) Pentacene/P13based ambipolar heterostructure OFETs (AOFETs) were fabricated. A bottom-gate electrode intermediate-contact structure was adopted. The influence of the bipolar device performance was discussed by various active layer deposition sequence.