Study Of New Cleaning Technology To Microelectronics IC Wafer

With the continuous development of microelectronics technology, microelectronics wafer cleaning process faces many technical problems to meet the increasingly demand for the cleanliness of the wafer surface. A range of deficiencies in the traditional RCA cleaning technology, such as consuming a large number of high-purity chemical reagents, high purity deionized water; complex process steps, and pollution to the environment, etc., are detailed in this thesis.A new cleaning technology of electrochemical oxidative has been studied.The paper makes a detailed introduction to the current microelectronics cleaning, and describes the advantages and disadvantages of several commonly used cleaning methods. This paper introduces the cleaning methods of electrochemical oxidation as well as the feasibility about the technology used in of the microelectronics cleaning. Boron-doped diamond as anode is applied in the new cleaning method for the electrochemical oxidation.The liquid products in anode cell have strong oxidation. The water can be oxidized into hydrogen peroxide, and can produce ozone.As a result, such strong oxidizing solution removes organic pollution completely. Non-ionic surfactant and metal ion chelating agent are used to remove particulate pollution and metal ion contamination. Electrochemical oxidation removal of organic pollutants is the final step, as the electrochemical oxidation of liquid will remve the residues of the active agent and chelating agent on the wafer surface and will not cause secondary pollution due to the use of reagents. Therefore, this method is an efficient, environmentally friendly cleaning technology that can reach and exceed existing cleaning techniques, gain better cleaning effects.