Research On Three-dimensional Assemblyand Testing Of Nano-Electro-mechanical Switch

Sustained advances in nanotechnology have promoted the development ofnanoelectronics from the laboratory stage to application fields such as biology,medicine and information technology. However, up to now, there are still noeffective ways available for accurate manipulation and assembly of nanoelectronics.In this thesis, we proposed a nano-electronics fabrication method using a dual-probe nanotweezer and a typical nanoelectronics-nanoswitch is fabricated bynanomanipulation and three-dimensional nanoassembly. This method builds a linkbetween the top-down fabrication and bottom-up fabrication techniques. The mainobjective of this study lies in fabricating nanowire nanoswitches, includingmicroelectrode design, three-dimensional nanoassembly and testing of thenanoswitches.Firstly, charge distribution on the surface of the nanowire and themicroelectrode are analyzed and thereby electrostatic forces between the nanowireand the microelectrode are calculated. Moreover, several key parameters whichaffect switching characteristics of the nanoswitch have been investigated. Thenanoswitch structure is designed and then a process flow for microelectrodefabrication through photolithography.Secondly, interactive mechanism at the contact surface is analyzed andinteractive forces between the nanotweezer and the nanowire are calculated. Then,nanoscale alignment between two probes is studied based on the atomic forcemicroscopy force sensing and image scanning. Moreover, three-dimensionalmanipulation and assembly strategies based on the real-time force feedback aredeveloped. In the next step, nanowires are accurately manipulated and assembledon the microelectrode to build a nanoswitch.Lastly, an electrical measurement has been carried out to obtain volt-amperecharacteristics of the fabricated nanoswitch. And then more performance indicators,including the equivalent stiffness, the resonant frequency, switch on voltage andpower consumption could be analyzed based on experimental results. The resultswe obtained demonstrate several excellent characteristics of nanoswitch such aslow leakage current, high sensitivity and low power comsumption which indicatethe possibility of being substitute of CMOS devices in the future.