Research On The Response Characteristic And Protection To ESD Of Semiconductor Bridge

The ignition characteristics of semiconductor bridge (SCB) and responses of SCB to electric static discharge (ESD) are studied in this thesis. PSpice is used to simulate the electrostatic interaction of semiconductor bridge, and the electrostatic protection measures of semiconductor bridge have been investigated. The details of this thesis are shown as the followings:(1) Two kinds of ignition ways of semiconductor bridge are compared in the view of discharge image, voltage-current curve, explosives and loading capacity. The discharge rules of constant current and capacitance discharge are concluded and the results showed that they are varied in the ignition time, discharge time.(2) The influence of the presence of ignition agent to electrostatic interactions of SCB is researched, and the performance variation of SCB with performance degradation and without degradation after ESD is studied.(3) The SCB eigen sensitivity electrostatic protection have been investigated from the bridge deck shape design and protetive devices and the protection ways showed that enlargement of semiconductor bridge chip size, avoid to make current intensive Angle characteristics such as shape, shunt capacitance and TVS diode. PSpice is used to simulate the electrostatic interaction of semiconductor bridge and it has laid a solid foundation for the next step of electrostatic protection simulation.(4) Anti-static measures of the semiconductor bridge between foot and shell were put forward. The results showed that smearing conductive adhesive between the shell and the foot line of SCB and designing discharge channel in the SCB were found to achieve antistatic effect. To the weak links of discharge between foot and shell, increasing insulation material between the soldering point and the top of the tube and the distance from the soldering point to shell side showed that antistatic effect is remarkable.