Synthesis And Characterization Of Organophosphine/Phosphite Stabilized Copper(Ⅰ)/Silver(Ⅰ) Complexes And The Use As Precursor For The Deposition Of Copper Film

With the rapid development of integrated Circuit, the integration degree becomes larger andlarge-from large scale integrated circuit to ultra-large scale integrated circuit. The traditionalinterconnect material, for example, aluminum has reached its physical limit, which couldn’t satisfy thedemand of new technique of integrated circuit. The new interconnect material is needed to replace thetraditional aluminum interconnect. Copper （silver）, owing to the lower electrical resistance and goodthermal conduction, is promising candidate as interconnect material in the ultra large scale integratedcircuit. Metal Organic Chemical Vapor Deposition （MOCVD） is one of good technique for themanufacturing of interconnect material. The key problem, however, is the selection of precursor withgood properties.The main research work in this thesis is design, synthesis a series of organophosphine/phosphitestabilized new copper（Ⅰ）/silver（Ⅰ） complexes （precursor）, The complexes obtained were characterizedby elemental analysis, FT-IR,1H NMR,13C{H} NMR and X-ray single crystal diffraction. TheTG-DSC was also used to determine the thermal stability as well as the decomposition mechanism.One complex was selected as precursor to grow the metal film using metal organic chemical vapordeposition （MOCVD） technique. The film obtained was characterized by SEM and EDX. Theresearch work includes the following three parts:Part one: Synthesis and characterization of organophosphine/phosphite stabilized copper（Ⅰ）N-acetylhenzamidesIn this part, a series of organophosphine/phosphite stabilized copper（Ⅰ） N-acetylhenzamide oftype [C₉H₈O₂NCu Ln, L=PPh₃, n=2（1a）, n=3（1b）; L=P（OMe）₃, n=2,（1c）, n=3（1d）; L=P（OEt）₃; n=2（1e）, n=3（1f）] were synthesized. The complexes obtained were characterized byFT-IR,1H NMR,13C{H} NMR spectroscopy and elemental analysis, respectively. Some complex wasdetermined by x-ray single crystal diffraction.Part two: Study of methodology for the synthesis of organophosphine/phosphite stabilized copper（Ⅰ）methanesulfonate and the copper film growth using complex as precursor by usingchemical vapor deposition techniques.New method for the synthesis of organophosphine/phosphite stabilized copper（Ⅰ）methanesulfonates has been developed. The complex obtained has been used as precursor for thedeposition of copper film by chemical vapor deposition techniques. The copper film was characterized by SEM and EDX.Part three: Synthesis and characterization of organophosphine/phosphite stabilized disilver（Ⅰ）iminodiacetates.A series of silver（Ⅰ） complexes of type [Ln AgO₂CCH₂NHCH₂CO₂Ag Ln](L=PPh₃, n=2（3e）;n=3（3e）; L=P（OEt）₃; n=2（3g）; n=3（3h） was accessible with PPh₃and P（OEt）₃as auxiliaryligand reacting with disilver（Ⅰ） iminodiacetates which was obtained by the iminodiacetic acid reactingwith AgNO₃in the presence of Et3N. These complexes were obtained in high yields and characterizedby1H,13C{H} NMR, FT-IR spectroscopy and elemental analysis, respectively.