Synthesis Of ZnO Nanowire Arrays And Its Application In The Field Of Nanogenerators

The forbidden band width of ZnO is3.34eV, and the excitons bound is about60meV [1], as a kind of new type of direct wide semiconductor material, it has many superior characteristics than the other semiconductor materials, and recently it gets worldwide attention. According to the nanometer ZnO semiconductor materials piezoelectric and the present situation of the application of Nanogenerator, in this thesis, by hydrothermal synthesis method, the success of Zn in preparation of nanometer ZnO out high orientation array, through the scanning electron microscope (SEM) and X-ray diffraction (XRD), Photoluminescence (PL) and the orientation of the test method on the preparation of nanometer ZnO array samples characterization. Finally, different conditions of the preparation of nanometer ZnO orientation array sample assembly of a electromagnetic radiant energy into electricity will be the nano generators.In this thesis, the main research contents and innovation points as follows:(1), firstly, by using hydrothermal synthesis method, the ammonia as O source, Zn piece as Zn source, when in the closed reaction kettle, through changing NH4+ion concentration and growth time. Then the the best experimental parameters to preparation high orientation ZnO nanowire arrays can be found. Study shows that the best experimental parameters for:the volume than between ammonia and water is1:5and the response time for24h and reaction temperature is100℃conditions, and the high orientation ZnO nanowire arrays can be prepared by a diameter of400nm, length average length of about3u～15um.(2), the different experimental conditions of the preparation of nanometer ZnO orientation array samples by scanning electron microscope (SEM) analysis the morphology, found that different growth parameters of the preparation of the nanowire arrays and the diameter size of about hundreds of nano, the average length is about3u～15um, nano line even thickness, the surface is smooth, crystal present cylindrical and six JiaoZhu shape; when use XRD to map analysis, it showed that the preparation of nanometer ZnO sample line array structure for common six party fine zinc mine structure, all the samples growth in (002) according to the characteristics of the crystal growth. The study found that the solution concentration,(002) according to the trend of crystal growth was the better; PL spectral analysis shows that, ZnO nanowire arrays in368.59nm, and the area has a very sharp wave, the launch peak energy of3.364ev. Through the excitons energy analysis, it can be found that the preparation of nanometer ZnO sample line array is typical of N type semiconductor. PL sample shows that in a wave,the spectral peak is only in368.59nm, and there is no impurity and defect photo luminescence peak, explain to the preparation of nanometer ZnO array of line with complete crystal forms, the grid work less defects.(3), According to the shortages about driving demanding and nano motor energy output current is too small of WangZhongLin research group of the preparation of nanometer piezoelectric generator. In the thesis, different growth parameters of the preparation of nanometer ZnO under line array, using different electrode materials to assembled an electromagnetic radiation into electricity nanometer generators. Using mobile phone radiation signal as the electromagnetic wave radiation sources, through the control variable method on the preparation of nanometer generator out various of output current is tested and found that the best parameters and the nano motor output current can be up to several decades microamps. It is higher than the current nano generator at present piezoelectric output values. The paper explores the new nano semiconductor analysis of generator power generation mechanism, the new nano generator use the principle of electromagnetic induction, but would connect ZnO nanowire arrays and metal electrodes attachment is equivalent to the symmetric oscillator antenna, symmetrical oscillator antenna can be induced the high frequency alternating receiving space electromagnetic signal, and in a symmetrical oscillator antenna inductive out of alternating current. And ZnO semiconductor nanoarray and metal electrodes for schottky barrier between contact will form a PN junction, similar to a detection diode, has the characteristics of single guide rectifier. Finally, by connecting ZnO nanowire arrays and metal electrodes two metal wire induction out of the alternating current into dc current output. Use of electromagnetic induction law of the preparation of nanometer ZnO semiconductor generators, the output value greatly improved, from nA orders of magnitude reached the uA orders of magnitude. For this research of the new nanometer ZnO orientation used in generator semiconductor nanowires array low prices, power generation method is simple, practical life is long, wide application prospect.