| In recent years, the paper thin film transis tor has received the widespreadattent ion due to its low cost and renewable. However, the paper thin filmtransistor operat ing vo ltage is very high, generally more than10V, which isprepared under the condit ion o f low temperature. This paper thin filmtransistor is difficult in a variet y of appl icat ions for high operat ing vo ltagesuch as portable equipment. So me paper thin film transistor has reached therequirement o f low operat ing voltage, but the preparat ion process is ver yco mplicated, is difficult to mass production. To so lve these problems, wedeveloped new materials and new preparat ion techno logy. We mainly do thefo llo wing works:(1) Preparat ion and opt imizat ion o f a-IGZO paper thin filmtransistors based on chitosan electro lyte. a-IGZO paper thin film transistor hasvery good performance: capacitance is4.1μF/cm2, leakage current is8×10-9A,ultralow operat ion vo ltage is1.5V, large on-off rat io is4.8×108, sub-thresho ldswing is80mV/decade, thresho ld vo ltage is0.7V, field-effect mobilit y is7.6cm2/Vs. In addit ion, we deposited SiO2as a-IGZO channel layer o f ant i-oxidat ion by Plasma Enhanced Chemical Vapor Deposit io n, the a-IGZO paperthin film transistors st ill have wonderful performance after a month later:leakage current is2.0×10-8A, ultralow operat ion vo ltage is1.5V, on-o ff rat iois1.0×108, sub-threshold swing o f90mV/decade, thresho ld vo ltage is0.75V.Chitosan fabricated by so l-gel exhibited good EDL effect, with a high specificcapacitance o f more than1.0μF/cm2. The chitosan film fabricated by spin-coat ing is able to st ick firm ly to the substrate, which showed a loose spong ystructure with a large number of internal spaces. We also analyzed thechitosan gate dielectric format ion o f electric double layer theory inco mbinat ion wit h the SEM cross-sect ion diagram of chitosan gate dielectricand its chemical structure.(2) When we prepared thin film transistor channe llayer by RF magnetron sputtering, we found the channel layer wasauto mat ically generated by the diffraction. Based on this finding, The ITOsource/drain electrodes and c hannel layer are fabricated on paper by oneshadow mask process via RF magnetron sputtering deposit ion at roo mtemperature. We emplo yed chitosan film with electric double layer effect asgate dielectric. These flexible TFTs exhibit a good performance with ultralow operat ion vo ltage of0.8V, a field-effect mobilit y o f8.1cm2/Vs, a sub-thresho ld swing o f80mV/decade, a large on-off rat io of1.2×107. |
