Study On The Model Of Organic Field-effect Transistors With Schottky Contact

Organic field-effect transistor (OFET) is the basis for electronic products toward thinner and lighter direction in the future. Compared with the traditional inorganic semiconductors device, the output characteristic curve of OFET has a significant nonlinear phenomenon. The nonlinear characteristic is a phenomenon that the output curve of OFET shows like-diode in low drain bias with Schottky contact type. The phenomenon is very common in the study of the OFET. In this paper, we combine the internal channel gradient theory in bulk of OFET and the current injection theory on the metal-semi conductor interface by introducing a depletion layer between the OFET metal electrode and the organic semiconductor layer to quantitatively explain OFET devices model. Calculating the OFET devices depletion layer potential drop and the interfacial injection electric field strength are in good agreement with the Kelvin probe force microscopy (KPFM) test results; The model proposed better together on the organic field effect transistor device output characteristic curve based on P3HT; Study of the device mobility and threshold voltage is affected by parasitic effects. All calculation can provide a reliable basis to improve the OFET device performance.