The Thermal Generation Mechanism And Thermal Performance Simulation Of GaAs HBT/GaN HEMT Device In Reliability Analysis

With the rapid development of microelectronic technology and electronic packaging technology, the heat flux of electronic Module and the chip-level has been reached300W/CM2, As the deterioration of the thermal stress on integrated circuits and electronic components increasing the impact of, The high temperature condition not only result in decreased reliability of integrated circuits, but also impact the stability of Module-level circuit system which consist of various types of chip components. Studies have shown that the thermal stress failure accounted for more than50%of the integrated circuit failure. So, with the decreasing size of integrated circuit technology, high density packaging of electronic module, the heat flux density will be increasing. So that, the thermal reliability problem is becoming increasingly serious.The basis of the reliability prediction of electronic module is equivalent to the reliability prediction of the electronic components in it. To the reliability model for the series equipment, The sum of the failure rates for all components in the equipment is that the failure rate of the electronic equipment. How to get the components failure rate with the change of stress data is particularly important. At the same time, how to obtain more accurate stress data more worthy of study and exploration.In order to study how to obtain an accurate temperature stress (peak junction temperature) of the device. In this article we used the microwave module as an example, Then choose two kinds of key devices InGaP/GaAs heterojunction bipolar transistor (HBT) and AlGaN/GaN HliMTs as the object of the study. Discusses the heat generation mechanism of device and The heat generating area was determined, the internal heat conduction and heat dissipation form of the devices have been discussed and finally create detailed3D solid models of the devices. Finally, using finite element software ANSYS WorkBench and device simulation software TCAD Silvaco thermal simulation have been identified in the heat generating area, in order to get more accurate device peak junction temperature.After get the peak junction temperature, and then calculation and analysis the failure rate of all kinds of electronic components within the electronic module, the sum of these component’s failure rate is the failure rate of microwave module. Finally, on the basis of the work to complete reliability prediction and derating design of microwave components. The method of reliability prediction of electronic components, assembly in the form of simulation will have a very high reference value for the initial thermal derating design of electronic product.