| With the increasingly serious energy and environmental problems make people moreconcerned about the efficiency and quality of power conversion, and guiding the powersemiconductor devices along the rapid development of high-efficiency, high-frequency,high-voltage, high-power, integrated and intellectualization’s direction.First, this article elaborates the physical parameters of affecting PIN diode’scharacteristics, These parameters affect the reverse saturation current of the diode, forwardvoltage drop, the maximum breakdown voltage and the conversion rate between turn-onand turn-off. Secondly the designing of ordinary PIN diode is described in detail andgiving an example to illustrate the calculation method of various static parameters. Laterfocusing on analyzing the dynamic characteristic of the PIN diode, by the analysis of thedynamic characteristics drawing the design method of modern PIN diode and illustration.The paper also improve the reverse recovery characteristics of modern PIN diode:1.Reducing anode concentration.2The base using the punch-through structure+buffer layer.3. Reducing the minority carrier lifetime of the base region.Finally, simulating the given example by SILVACO-TCAD simulation software, thesimulation results consistent with theoretical analysis. Improving reverse recoverycharacteristics also conducts several simulation, the simulation results:1. Decreasing theanode concentration and reducing the minority carrier lifetime that the reverse recoverycurrent is reduced and softness factor is greater than1.2. The plus buffer layer structure’sdiode further reducing reverse recovery peak current and softness factor is increased togreater than2. Therefore, it can be seen the modern PIN diode’s reverse recoverycharacteristics is improved from the simulation results, and having a reference value forresearching the modern PIN diode’s design method. |
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