Research On SiN Film Stress Theory And Process

It has become a current domestic and international research concern and development priorities that introducing strained silicon technology into the device. It can significantly improve the carrier mobility and performance by applying stress throughout the channel. SiN film-induced-strain technology, served as one kind of strained Si technologies, introduces stress into the channel and improves the carrier mobility in order to optimize the device performance. Compared with other strained Si technologies, SiN-induced strain technology is less costly, easier to achieve in process and has better compatibility with existing CMOS process. It has broad application prospects in the high-speed/high-performance device/circuit. At present, there is few report on the mechanism of the generation and introduction of SiN-induced strain. It has quite important theoretical significance and application value to study generation and introduction mechanism and process based on the chemical structure and mechanical mechanism of SiN film.Starting from the traditional stress introduction methods, based on the internal atomic structure of the SiN stress film, this paper studies changes of the chemical bonding and H element concentrations of the process, and gets the mechanism of SiN stress film. By effectively deviding the SiN stress film on the MOSFET into different parts, three stress mechanism is established and investigated from three angles. A complete model of SiN stress film mechanism is obtained, which laid an important theoretical basis for the theory study and design of the SiN stress film.By applying the UVTP and some other post-processing techniques upon the grown SiN film and by a detailed analysis of various performance parameters, this paper provide the growth of SiN film with a solid theoretical support.Based on PECVD technology, this paper analyzes the influence on the SiN film stress from various physical conditions, optimized process condition is obtained based on the analysis above. High-stress SiN film is successfully deposited on the Si wafers in the experiments based these data above. Experimental results and theoretical research results highly consistent.