Back Pressure To Print For Pzt Nano Array And Its Features

Lead zirconate titanate, known as PZT, has been widely used in areas such as pressure sensor, transducer or inferred imaging for many years due to its excellent piezoelectricity and pyroelectricity properties. In recently years, PZT attracts widely attention again because of its great technique potential in next generation non-volatile memory and it has been well recognized as one of the most important candidates in ferroelectric non-volatile memory technology. At the same time, with the rapid development of nano-technology, it is found that the nanoscale PZT exhibits some unqiue properties which can lead to many innovative applications. The application of PZT in non-volatile memory and nano-technology has already lead to a series of new technology and the trend will continue with no doubt. Under such a background, fabricating nanopatterns with PZT has become a hot spot in both industrial application and academic research.Among the existing nanofabrication methods, the traditional photo lithography is limited by light diffraction and is incapable of dealing with patterns whose dimention is smaller than100nm directly; E-beam lithography is not suitable for mass production because of its time and energy consumption; DUV or X-ray lithography requires sophisticated equipments with high cost, and the high energy from UV light also induces degradation in PZT ferroelectric property. Nano-imprint has the advantage of low cost and high through put, with no physical limit in its feature size. As a result, it has become one of the most important methods in fabricating PZT nanopatterns.In this paper, we successfully fabricated PZT nanoarrays by inverse imprinting PZT sol-gel on to silicon substrate. The inverse imprint process is systemically characterized and analyzed using atomic force microscope (AFM). Based on the experiment, a process model of PZT inverse imprinting is proposed and preliminary mathematical analyze is carried out. The samples are also measured by piezoelectric force microscope(PFM), Raman and Fourier transform spectroscopy (FTIR). The results indicate that the patterned PZT fabricated by inverse imprint exhibits excellent ferroelectric and piezoelectric properties. Besides, compared with samples prepared by traditional nano-imprint, our sample also exhibit some unique properties. Our work provides not only an effective method in fabricating PZT nanopatterns, but also a good reference in understanding the relationship between external stress and PZT crystal/domain structure.