Studies Of N-type And P-type Doping ZnO Films Grown By MOCVD

As a II-VI direct wide band gap semiconductor material, the band gap of ZnO is3.37eV（at room temperature）, and its exciton binding energy is60meV, with greatpromising application at light-emitting, message restoring, displaying. In this thesis,n-type ZnO and p-type ZnO was prepared, to investigate the crystalline quality andproperty of ZnO films.We prepared undoped ZnO films on i-type6H-SiC substrates by MOCVD（metalorganic chemical vapor deposition） method. Through analyzing the surfacemorphology and optical properties of the deposited undoped ZnO films, the effects oftemperature and buffer layer on structures have been investigated in this thesis, to getthe best condition of depositing ZnO films.Ga doped ZnO films were deposited on c-plane sapphire substrates. Change theflow of Ga source to get ZnO films with different Ga concentration, found the linearrange of n-type doping through Hall measurement, analysis the crystal quality andsurface morphology properties of ZnO:Ga films. The n-type ZnO films with a carrierconcentration of1×10¹⁹cm^-3were obtained.At last, phosphorous doped ZnO films were deposited, through crystal quality,electricity characterization and optical quality measurements, p-type ZnO: P filmswere got, hole concentration could get1.66×10¹⁶cm^-3, the films had good crystallinequality and optical quality.