Design Of Low Power Consumption Temperature Sensor Based On40nm CMOS Process

With the replacement of electronic products and the improvement of integrated circuit technology, the feature size of integrated circuit chip gets smaller and smaller, from0.18μm,0.13μm,90nm,65nm to45nm,40nm and even32nm. High integration density and high device density causes large energy consumption. Thermal effect of the chip becomes so obvious that it can not be ignored. The energy consumption of integrated circuit devices and metal interconnection will cause uneven temperature distribution of the chip, which leading to the change of circuit parameters, worse performance, and even logic errors. Thus, the chip could not work properly. Relevant research indicate that, when the average temperature of the chip increases by1℃, the drive capability of the MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) will drop by about4%, the line delay will increase5%, and the IC failure rate will doubled. In order to avoid the damage of the chip by local overheating, it is needed to integrate a temperature sensor inside the chip to monitoring the real-time temperature.In this paper, a low-power, high precision CMOS temperature sensors is designed, using the temperature characteristic of CVBT which is compatible with CMOS process. Switched current source structure is used in this temperature sensor, taking advantage of the PTAT voltage△VBE between base-emitter of the PNP transistor at the different time. It is based on SMIC40nm CMOS logic process, and the voltage of power supply is2.5V (overdrive to3.3V)/1.1V. The simulation result shows that, when the range of the temperature is-40℃～125℃, the power consumption is about247.5μW, the temperature sensitivity is7.2mV/℃, and the accuracy is within±0.5℃...