Research Of Sn Target Generator For LPP Extreme Ultraviolet

The speed and cost of Integrated Circuit has followed Moore’s law for years since it’sborn. The speed is faster and faster. The core is smaller and smaller. The cost is lower andlower. But the size of core depends on the line width that lithographic can offered. With thedevelopment of lithographic, the line width based on the deep ultraviolet has reached itslimit. In the next generation lithographic, the13.5nm laser produced plasma extremeultraviolet source which use a fluid Sn target has been regarded as promising. The Sn targetgenerator in laser produced plasma extreme ultraviolet source is a very important part. Themain technology of fluid Sn target is disturbing a Sn jet in some way to get the Sn jet breakand the get the Sn droplet. After we get the Sn droplet, use a laser targeted on the Sn dropletto get the plasma and then get the extreme ultraviolet.This thesis designed a generator of Sn fluid target for extreme ultraviolet source to lay afoundation for designing a practical Sn fluid target and then a practical extreme ultravioletby solving problem in choosing critical parts and debugging.The main content in this thesis:(1) Described the parameter of the generator of Sn fluid target for extreme ultravioletsource and the major theory of jet break, and then did some numerical simulations on theprocess of the Sn jet break into Sn droplet used finite volume method.(2) Described the main structure and the issues in selection and design of the main partsof the generator of Sn fluid target, and get a good result by designs a real generator.(3) Summed up the problems and solutions in design and debugging of the Sn dropletgenerator, and made a suggestion about the improvement in the future.