Design Of Array Substrate For X-Ray Digital Imaging Flat Panel Detector

X-Ray digital image flat panel detectors are widely used in aviation, medical,non-destructive testing and other industries. These products having good quality and datatransfer rate have become widely accepted. As panel industry of amorphous silicon liquidcrystal display and the development of large-scale integrated circuit technology, the conditionfor researching digital flat panel X-Ray detection technology is ripe. Domestic famousscholars and experts begin to study related research projects.Based on the current development of amorphous silicon amorphous silicon, this paperwill design a TFT array substrate for X-Ray digital image flat panel detector.Firstly, the paper will introduce development process of X-Ray imaging technology,research status and the advantages of X-Ray detector. Then we analyze the working principleof X-Ray FPD and determine the content of this thesis，designing an array substrate of X-Raydigital imaging flat panel detector.The quality of processing technology decides the designed quality of array substrate.This article does a more comprehensive study on processing technology. Includinglithography processes, magnetron sputtering coating technology, plasma enhanced chemicalvapor deposition. Perfect process will be the foundation for designing TFT array substrate.The design of array is the key to the FPD. We will use the most accurate Spice models toTFT thin film transistor’s simulation. SmartSpice simulation software is used for pixel chargerate, I/V characteristic curve of the simulation. Following the full analysis of on-state current,off-state current, the voltage transition and CR delay, we optimize the design of arraysubstrate. Then we use the professional engineering drawing software Laker to draw all thelayout of array substrate, and making full preparations for the flow sheet.Finally, we test the array substrate which is produced for acceptance. Mainly we checkthe appearance inspection of the pattern, film quality which is identified with scanningelectron microscopy and the measured I/V characteristic curve. The final conclusions ofsilicon success are achieved.