Study On The Optical Properties Of GaN-bassed Blue LED

The III-V nitride-semiconductor as represented by GaN is the third generation of semiconductor materials developing in recent decade. These semiconductor materials have excellent optical and electrical performance. By controlling their respective component, their band gap can continuously change from0.7eV of InN to3.4eV of GaN nutil6.2eV of AlN, which cover the entire visible light district and expand to the scope of the UV.In recent years, GaN-based optoelectronic materials and devices have been rapidly developed, but there are still some problems to be solved. Many theoretical and experimental studies should be focused on the GaN-based materials and especially these problems affected industrialization. Photoluminescence and electroluminescence are important means to the study of GaN-based light-emitting materials and devices. Based on photoluminescence, electroluminescence and other technologies, a comprehensive set of optical measurement system is set up in this paper. The system can be used to as a variety of measurements on GaN-based optoelectronic materials and devices by changing the temperature, the excitation power, the excitation wavelength of light and other experimental conditions. The structures of the system laid a favorable foundation for further research and development of GaN-based light-emitting devices.Using our own building optical measurement system, the optical properties of the blue LED growing on the MOCVD equipment are researched in this paper. This has very significant influence on the national implementation of the semiconductor lighting plan. This work was supported by the National973project (National Key Basic Research and Development Program No.2009CB930503) in China.