| GaN-based semiconductor with wide direct bandgap,excellent physical andchemical stability,high in saturated electronic drift velocity, high breakdown fieldstrength and excellent performance,thedevelopmentofhigh-frequency,hightemperature,high powerelectronic devicesandoptoelectronic devicespreferred materialsystem. In this paper, the growthofGaN-basedmaterialscharacteristics,thesystematicstudyof thedifferentpolarityof GaN filmsby molecular beamepitaxial growth,theGapolarityand Npolarityinthegrowth, surface morphology, crystalthe difference inquality, were also studied.GaN p-type doping, the electrical propertiesofp-GaN.Themainresults are as follows:(1) polar GaNfilms, throughthecomparison of differentpolar GaNgrowth,theanalysis found, thedifferentpolarity ofthesurface atomsrearrangetohave adifferentreconstruction, such as the Npolarity of thesamplein the coolingprocess, therewill bea stable3×3reconstruction, which indicates that thesamplesurfacelayers ofatomsinthecooling process, thelatticearrangement ofcyclechanges, thecycleiscompletely different, with the body ofthe unit cell; and Ga-polarof the surfaceisrelatively stable.（2）Two kinds of GaNsurfacemorphology and crystalqualityanalysisresultsshowthat theGa-polarGaNsurfacethantheformationoftheNpolarity,(102) FWHMlarger,suggesting that, Ga poleof GaNedge dislocation densityis higher than thepolarityofGaN.（3） Analysis of the natureoftheH atomsof GaNhas a great impact,thattheHinn-GaNandp-GaN, respectively, from thedonorandacceptorrole, and thenthroughtheexperimentaltemperaturegrowthof Mgandcarriercarrier concentration andmobilityoftherelationship betweenthesolubilityofMgin GaNisnotlimitedtothedecisivecauseofthehole concentration, play a major roleisthelevelofbackgrounddonorconcentration. |
